Process for producing semiconductor integrated circuit device

Details Process for producing semiconductor integrated circuit device Process for producing semiconductor integrated circuit device

2006-11-13

2009-06-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S319000, C438S411000, C438S421000, C257S522000, C257SE21573

Reexamination Certificate

active

07553756

ABSTRACT:
An object of the present invention is to prevent formation of a badly situated via metal in a Damascene wiring portion in multiple layers having an air-gap structure. In the present invention, a via is completely separated from an air-gap45by forming an interlayer insulating film44having the air-gap45between adjacent Damascene wiring portions after forming a sacrifice film pillar42from a selectively removable insulating film in a formation region of a connection hole. The present invention can provide multiple-layered buried wiring in which a high reliable via connection and a reduced parasitic capacitance due to the air-gap are achieved.

REFERENCES:
patent: 6093633 (2000-07-01), Matsumoto
patent: 6159845 (2000-12-01), Yew et al.
patent: 6211561 (2001-04-01), Zhao
patent: 6252290 (2001-06-01), Quek et al.
patent: 6576550 (2003-06-01), Brase et al.
patent: 6890828 (2005-05-01), Horak et al.
patent: 7056822 (2006-06-01), Zhao
patent: 7253095 (2007-08-01), Lur et al.
patent: 7449407 (2008-11-01), Lur et al.
patent: 2004/0232552 (2004-11-01), Wang et al.
patent: 2005/0037604 (2005-02-01), Babich et al.

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