Method for forming metal contact in semiconductor device

Details Method for forming metal contact in semiconductor device Method for forming metal contact in semiconductor device

2006-12-29

2009-10-27

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S654000, C438S656000, C438S675000, C438S677000, C438S688000, C257SE21588

Reexamination Certificate

active

07608535

ABSTRACT:
An interlayer insulation layer is formed on a semiconductor substrate to cover a lower wiring layer that is also formed on the semiconductor substrate. A contact hole to expose a surface of the lower wiring layer is formed by etching the interlayer insulation film. A wetting layer is formed on an inner wall of the contact hole. An anti-deposition layer is formed around an entrance of the contact hole to prevent an aluminum layer from being deposited around the entrance of the contact hole. The contact hole is filled with the aluminum layer.

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