Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2006-12-26

2009-12-08

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S368000, C257SE29255

Reexamination Certificate

active

07629648

ABSTRACT:
The disclosure concerns a semiconductor memory device including an insulating film; a semiconductor layer provided on the insulating film; a source layer and a drain layer formed on the semiconductor layer; a body region provided between the source layer and the drain layer, the body region being in an electrically floating state, accumulating or emitting charges for storing data, and including a first body part and a second body part, the first body part being smaller than the second body part in a thickness measured in a direction perpendicular to a surface of the insulating film; a gate insulating film provided on the first body part and the second body part; and a gate electrode provided on the gate insulating film.

REFERENCES:
patent: 6197636 (2001-03-01), Park et al.
patent: 6946377 (2005-09-01), Chambers
patent: 2003/0025135 (2003-02-01), Matsumoto et al.
patent: 2005/0133843 (2005-06-01), Shino
patent: 2006/0049444 (2006-03-01), Shino
patent: 2008/0061326 (2008-03-01), Yoshida et al.
patent: 2005-158869 (2005-06-01), None
patent: 2006-80280 (2006-03-01), None

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