Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-11-06
2009-06-09
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S686000, C257S737000, C257S738000, C257S778000, C257SE21705, C257SE25023
Reexamination Certificate
active
07545047
ABSTRACT:
A semiconductor device with a wiring substrate as a stacking element for a semiconductor device stack is described herein. The wiring substrate includes a plastic frame of a first plastic compound and a central region of a second plastic compound. A semiconductor chip is embedded with its back side and its edge sides in the second plastic compound, the active upper side of the semiconductor device being in a coplanar area with the first and second plastic compounds.
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Bauer Michael
Fuergut Edward
Jerebic Simon
Woerner Holger
Edell Shapiro & Finnan LLC
Huynh Andy
Infineon - Technologies AG
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