Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-25
2009-10-13
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000
Reexamination Certificate
active
07602011
ABSTRACT:
The semiconductor memory device according to the present invention includes a charge storage layer26formed over a semiconductor substrate10and including a plurality of particles16as charge storage bodies in insulating films12, 24, and a gate electrode30formed over the charge storage layer26, in which the particles16are formed of metal oxide or metal nitride.
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International Search Report of PCT/JP2004/017776, mailing date Jan. 18, 2005.
Prior Art Information List.
Fujitsu Microelectronics Limited
Fujitsu Patent Center
Vu Hung
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