Semiconductor device having an interconnect structure and a...

Details Semiconductor device having an interconnect structure and a... Semiconductor device having an interconnect structure and a...

2006-02-23

2009-11-03

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S508000, C257S522000, C257S635000, C257S637000, C257S750000, C257S751000, C257S759000, C257S760000, C257SE21575, C257SE23145

Reexamination Certificate

active

07612453

ABSTRACT:
A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first interconnect, a conductive first plug provided on the upper portion of the Cu silicide layer and connected to the first interconnect, a Cu silicide layer covering the upper portion of the first plug, a first porous MSQ film provided over the side wall from the first interconnect through the first plug and formed to cover the side wall of the first interconnect, the upper portion of the first interconnect, and the side wall of the first plug, and a first SiCN film disposed under the first porous MSQ film to contact with the lower portion of the side wall of the first interconnect and having the greater film density than the first porous MSQ film.

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Chinese First Office Action, Jul. 20, 2007.

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