Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-24
2009-02-17
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S570000, C438S582000, C438S597000, C438S653000, C257SE21584, C257SE23010
Reexamination Certificate
active
07491643
ABSTRACT:
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
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Lavoie Christian
Murray Conal E.
Rodbell Kenneth P.
Ghyka Alexander G
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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