Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-06-29

2009-08-18

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257S328000, C257S135000, C257S339000, C257S329000, C257S493000, C257S492000, C257SE29257, C257SE29262

Reexamination Certificate

active

07576393

ABSTRACT:
A semiconductor device comprises a pillar layer including first semiconductor pillars of a first conduction type and second semiconductor pillars of a second conduction type formed laterally, periodically and alternately. The first and second semiconductor pillars include a plurality of diffusion layers formed in a third semiconductor layer as coupled along the depth. The diffusion layers have lateral widths varied at certain periods along the depth. An average of the lateral widths of the diffusion layers in one certain period is made almost equal to another between different periods.

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