Process for manufacturing silicon-on-insulator substrate

Details Process for manufacturing silicon-on-insulator substrate Process for manufacturing silicon-on-insulator substrate

2006-09-29

2009-12-15

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S423000, C438S528000, C257SE21563

Reexamination Certificate

active

07632735

ABSTRACT:
A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greater surface height than other regions; then implanting oxygen ions in the silicon substrate so as to form the oxide layer.

REFERENCES:
patent: 2005/0202600 (2005-09-01), Yamashita
patent: 2004-193185 (2004-07-01), None

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