Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-15
2009-12-15
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257SE21170, C257SE21267, C257SE21319, C257SE21324, C257SE21645
Reexamination Certificate
active
07633108
ABSTRACT:
A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method provides a substrate; forms an MSM bottom electrode overlying the substrate; forms a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forms an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).
REFERENCES:
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 7271081 (2007-09-01), Li et al.
patent: 7303971 (2007-12-01), Hsu et al.
patent: 7446010 (2008-11-01), Li et al.
Evans David R.
Hsu Sheng Teng
Li Tingkai
Zhuang Wei-Wei
Law Office of Gerald Maliszewski
Maliszweski Gerald
Nhu David
Sharp Laboratories of America Inc.
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