Metal/semiconductor/metal current limiter

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S288000, C257SE21170, C257SE21267, C257SE21319, C257SE21324, C257SE21645

Reexamination Certificate

active

07633108

ABSTRACT:
A method is provided for forming a metal/semiconductor/metal (MSM) current limiter and resistance memory cell with an MSM current limiter. The method provides a substrate; forms an MSM bottom electrode overlying the substrate; forms a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, forms an MSM top electrode overlying the semiconductor layer. The ZnOx semiconductor can be formed through a number of different processes such as spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).

REFERENCES:
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 7271081 (2007-09-01), Li et al.
patent: 7303971 (2007-12-01), Hsu et al.
patent: 7446010 (2008-11-01), Li et al.

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