Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-29
2009-11-03
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S372000, C257SE21630, C257SE21625
Reexamination Certificate
active
07612422
ABSTRACT:
Exemplary embodiments provide structures for dual work function metal gate electrodes. The work function value of a metal gate electrode can be increased and/or decreased by disposing various electronegative species and/or electropositive species at the metal/dielectric interface to control interface dipoles. In an exemplary embodiment, various electronegative species can be disposed at the metal/dielectric interface to increase the work function value of the metal, which can be used for a PMOS metal gate electrode in a dual work function gated device. Various electropositive species can be disposed at the metal/dielectric interface to decrease the work function value of the metal, which can be used for an NMOS metal gate electrode in the dual work function gated device.
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Chambers James Joseph
Colombo Luigi
Visokay Mark Robert
Brady III Wade J.
Franz Warren L.
Le Dung A.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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