Exposure apparatus and method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S313000, C430S394000, C430S005000

Reexamination Certificate

active

07604925

ABSTRACT:
A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.

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Horiuchi, English translation of JP 61-91662, Projection Exposure Apparatus May 9, 1986.
“Effect of Central Obscuration on Image Formation In Projection Lithography”, Yang et al, SPIE vol. 1264 Optical/Laser Microlithography (1990), pp. 477-485.

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