Method for producing semiconductor device

Details Method for producing semiconductor device Method for producing semiconductor device

1996-07-18

1999-05-25

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

65504, 65 63, 65 64, H01L 2184

Patent

active

059077700

ABSTRACT:
An amorphous silicon film is formed on a flat glass substrate, and then crystallized by heating to obtain a crystalline silicon film. The glass substrate is placed on a stage having a convex U-shaped curved surface. The glass substrate is heated for a desired period of time at a temperature close to a strain point of the glass substrate, and then is cooled. Also, an amorphous silicon film formed on a glass substrate is crystallized into a crystalline silicon film by heating and then the glass substrate is mounted on a stage having a flat surface in such a manner that the lower surface of the glass substrate is in close contact with the flat surface of the stage by pressing the upper surface of the glass substrate. Then, a linear laser beam is irradiated on the crystalline silicon film in a scanning manner.

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patent: 5294238 (1994-03-01), Fukada
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patent: 5413958 (1995-05-01), Imahashi et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5559042 (1996-09-01), Yamazaki et al.

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