Ion implantation device with a dual pumping mode and method...

Details Ion implantation device with a dual pumping mode and method... Ion implantation device with a dual pumping mode and method...

2007-10-02

2009-11-24

Wells, Nikita (Department: 2881)

Radiant energy

Ion generation

Field ionization type

C250S492210, C250S281000, C250S282000, C250S288000, C250S441110, C315S111810

Reexamination Certificate

active

07622722

ABSTRACT:
An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

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U.S. Appl. No. 11/525,878, filed Sep. 22, 2006.
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