Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-23
2009-08-11
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257S324000
Reexamination Certificate
active
07573091
ABSTRACT:
The present invention relates to a semiconductor device that includes a semiconductor substrate (10) having source/drain diffusion regions (14) formed therein and control gates (20) formed thereon, with grooves (18) being formed on the surface of the semiconductor substrate (10) and being located below the control gates (20) and between the source/drain diffusion regions (14). The grooves (18) are separated from the source/drain diffusion regions (14), thereby increasing the effective channel length to maintain a constant channel length for charge accumulation while enabling the manufacture of smaller memory cells. The present invention also provides a method of manufacturing the semiconductor device.
REFERENCES:
patent: 5583064 (1996-12-01), Lee et al.
patent: 6011725 (2000-01-01), Eitan
patent: 7091550 (2006-08-01), Hsu et al.
patent: 2004/0082198 (2004-04-01), Nakamura et al.
patent: 2004/0110390 (2004-06-01), Takagi et al.
patent: 07-226513 (1995-08-01), None
patent: 2004-012573 (2004-01-01), None
patent: 2004-111737 (2004-04-01), None
patent: 2004-193178 (2004-07-01), None
Spansion LLC
Trinh Michael
LandOfFree
Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4081816