Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-28

2009-08-11

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

07573109

ABSTRACT:
A semiconductor device having high withstand strength against destruction. The semiconductor device1includes guard buried regions44bof second conductivity type concentrically provided on a resistance layer15of first conductivity type and base diffusion regions17aare provided inside of the guard buried region44band base buried regions44aof the second conductivity type are provided on the bottom surface of the base diffusion regions17a. A distance between adjacent base buried regions44aat the bottom of the same base diffusion region17ais Wm1, a distance between adjacent base buried regions44aat the bottom of the different base diffusion regions17ais Wm2, and a distance between the guard buried regions44bis WPE. A ratio of an impurity quantity Q1of the first conductivity type and an impurity quantity Q2of the second conductivity type included inside the widthwise center of the innermost guard buried region44bis 0.90<Q2/Q1when Wm1<WPE<Wm2. When WPE<Wm1<Wm2, the ratio is Q2/Q1<0.92 and when Wm1<Wm2<WPE, the ratio is 1.10<Q2/Q1.

REFERENCES:
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Supplementary European Search Report dated Jul. 22, 2008.

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