LDMOS device

Details LDMOS device LDMOS device

2007-04-23

2009-12-01

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S339000, C257SE29027, C438S197000

Reexamination Certificate

active

07626233

ABSTRACT:
An LDMOS transistor comprises source, channel and extended drain regions. The extended drain region comprises a plurality of islands that have a conductivity type that is opposite to the extended drain region. The islands have a depth less than a depth of the extended drain region.

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