Methods of fabricating capacitor

Details Methods of fabricating capacitor Methods of fabricating capacitor

2004-12-28

2009-10-20

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S528000, C257S532000, C257SE27016

Reexamination Certificate

active

07605418

ABSTRACT:
A fabricating method of a capacitor is disclosed. Particularly, a fabricating method of a capacitor which forms a capacitor in the place where the insulation layer of an STI region is removed, preventing interlayer dielectric layers from becoming thick. A disclosed method comprises: defining an STI region in the predetermined region of a substrate; removing the insulation layer of the STI region where a capacitor will be formed; forming a gate insulation layer and a first polysilicon layer on the substrate, and patterning the first polysilicon layer; and forming a first insulation layer and a second polysilicon layer on the substrate, and patterning the first insulation layer and the second polysilicon layer.

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