Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2006-01-06

2009-10-27

Pham, Thanhha (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S209000, C257S760000, C257SE27070

Reexamination Certificate

active

07608926

ABSTRACT:
A new method to polish down conductive lines in the manufacture of an integrated circuit device is achieved. The method comprises providing a plurality of conductive lines overlying a substrate. A high density plasma (HDP) oxide layer is deposited overlying the substrate and the conductive lines. In the regions between the conductive lines, first planar surfaces of the HDP oxide layer are formed below the top of the conductive lines. The HDP oxide layer is sputtered down overlying the conductive lines such that second planar surfaces of the HDP oxide layer are formed above the conductive lines. A polish stopping layer is deposited overlying the HDP oxide layer. A film layer is deposited overlying the polish stopping layer. The film layer is polished down to the polish stopping layer overlying the second planar top surfaces. The film layer, the polish stopping layer, and the conductive lines are polished down to the polish stopping layer overlying the first planar top surfaces to complete the polishing down of the conductive lines.

REFERENCES:
patent: 5670410 (1997-09-01), Pan
patent: 5686356 (1997-11-01), Jain et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6261851 (2001-07-01), Li et al.
patent: 6294457 (2001-09-01), Liu
patent: 6391768 (2002-05-01), Lee et al.
patent: 6423628 (2002-07-01), Li et al.
patent: 6437441 (2002-08-01), Yamamoto
patent: 6531410 (2003-03-01), Bertin et al.
patent: 6541312 (2003-04-01), Cleeves et al.
patent: 6566757 (2003-05-01), Banerjee et al.
patent: 6627510 (2003-09-01), Evans et al.
patent: 6858514 (2005-02-01), Hsu et al.
patent: 2001/0019887 (2001-09-01), Jang et al.
patent: 2004/0115914 (2004-06-01), Manning
patent: 317006 (1997-10-01), None
patent: 430592 (1999-04-01), None
patent: 410393 (2000-11-01), None
patent: 440938 (2001-06-01), None

Affiliated with

Also associated with

Rating

Nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4076012