Semiconductor device including non-volatile memories

Details Semiconductor device including non-volatile memories Semiconductor device including non-volatile memories

1994-07-05

1995-09-12

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257324, 257368, H01L 2968, H01L 2702

Patent

active

054499356

ABSTRACT:
The present invention provides a nonvolatile semiconductor memory that comprises one-transistor cells and yet is able to read information from a selected memory cell without mistake. The memory comprise switch elements (3A,3B,3C,3D) which are arrayed in rows and columns, each of the switch element having a drain and a source, and a control electrode, first lines each (48) of which includes a main line (48H) and subsidiary lines (48A,48B) diverging from the main line, each of the subsidiary lines connecting to the drain of one of the switch elements (3A,3B) arrayed in a row, second lines each (44) of which includes a main line (44H) and subsidiary lines (44A,44C) diverging from the main line, each of the subsidiary lines connecting to the source of one of the switch elements (3A,3C) arrayed in a column, word lines each (52) of which connects to all of the control electrodes of the switch elements (3A,3C) arrayed in a column, and a diode (27 ) interposed either in the subsidiary line connecting to the drain of each of the switch elements or in the subsidiary line connecting to the source of the same switch element.

REFERENCES:
patent: 5032891 (1991-07-01), Takagi et al.

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