Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-09
2009-02-10
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S667000, C029S852000, C029S025010
Reexamination Certificate
active
07488675
ABSTRACT:
A method for fabricating an IC board without a ring structure is provided. In the method, after the completion of the core board (including the core through hole), the second pattern photoresist layer is used to mask over the first deposited metal layer, and a portion of the second deposited metal layer (this portion of the second deposited metal layer is to electrically couple to the conductive circuit of the core through hole). Later, the second deposited metal layer, the first deposited metal layer, the metal layer, and the substrate at the innermost layer which are not masked by the second pattern photoresist layer are removed. As a result, the substrate is exposed to form the ringless structure, and to couple a conductive line to the core board through hole.
REFERENCES:
patent: 5882957 (1999-03-01), Lin
patent: 5884396 (1999-03-01), Lin
patent: 2003/0056366 (2003-03-01), Peng
patent: 2006/0255009 (2006-11-01), Card et al.
S. Wolf and R.N. Tauber(Silicon Processing for the VLSI Era, Vol. 1: Process Technology, 1986).
Kinsus Interconnect Technology Corp.
Lee Jae
Toledo Fernando L
LandOfFree
Method for fabricating IC board without ring structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating IC board without ring structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating IC board without ring structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4073313