Multilayer buffer structure including II-VI compounds on a silic

Details Multilayer buffer structure including II-VI compounds on a silic Multilayer buffer structure including II-VI compounds on a silic

1994-05-16

1995-09-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257190, 257191, 257200, H01L 29161

Patent

active

054499275

ABSTRACT:
A layer (32) of a HgCdTe compound epitaxially contacts a buffer structure, which in turn epitaxially contacts a silicon substrate (22). The buffer structure is formed of II-VI compounds, and preferably includes at least one layer (24) of a ZnSeTe compound epitaxially contacting the silicon substrate (22) and a layer (30) of a CdZnTe compound overlying the ZnSeTe compound layer (24). The ZnSeTe compound layer (24) may be provided as a single graded layer having a composition of ZnSe adjacent to the silicon and a composition of ZnTe remote from the silicon, or as two distinct sublayers with a ZnSe sublayer (26) adjacent to the silicon substrate (22) and a ZnTe sublayer (28) remote from the silicon substrate (22).

REFERENCES:
patent: 3963539 (1976-06-01), Kemlage et al.
patent: 4558336 (1985-12-01), Chang et al.
patent: 4994867 (1991-02-01), Biegelsen
patent: 5302232 (1994-04-01), Ebe et al.
patent: 5306386 (1994-04-01), de Lyon
Goela et al., "Growth of CdZnTe on Si by low-pressure chemical vapor deposition," Applied Physics Letters, 51 (12), Sep. 1987, pp. 928-930.
Kay et al., "HgCdTe photovoltaic detectors on Si substrates", Applied Physics Letters 51 (26), Dec. 1987, pp. 2211-2212.

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