Semiconductor formation method that utilizes multiple etch...

Details Semiconductor formation method that utilizes multiple etch... Semiconductor formation method that utilizes multiple etch...

2004-09-02

2009-08-11

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S639000, C438S740000

Reexamination Certificate

active

07572727

ABSTRACT:
The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This contact formation process provides relatively small substrate connections while addressing critical lithographic printing limitation concerns in forming contact holes with small dimensions. In one embodiment, a multiple etch stop insulation layer comprising multiple etch stop layers is deposited. A contact region is formed in the multiple etch stop insulation layer by selectively removing (e.g., etching) some of the multiple etch stop insulation layer. In one embodiment, a larger portion of the multiple etch stop insulation layer is removed close to the metal layer and a smaller portion is removed closer to the substrate. The different contact region widths are achieved by performing multiple etching processes controlled by the multiple etch stop layers in the multiple etch stop insulation layer and spacer formation to shrink contact size at a bottom portion. Electrical conducting material (e.g., tungsten) is deposited in the contact region.

REFERENCES:
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patent: 6078073 (2000-06-01), Habu et al.
patent: 6083822 (2000-07-01), Lee
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patent: 2002/0008323 (2002-01-01), Watanabe et al.
patent: 2005/0003656 (2005-01-01), Chung

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