Real-time gate etch critical dimension control by oxygen...

Details Real-time gate etch critical dimension control by oxygen... Real-time gate etch critical dimension control by oxygen...

2007-07-13

2009-12-15

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S760000, C216S060000

Reexamination Certificate

active

07632690

ABSTRACT:
A process and apparatus for controlling an etchant gas concentration in an etch chamber. The etchant gas concentration and an inert gas concentration are determined and the latter concentration is used to normalize the etchant gas concentration. The normalized value is compared with a predetermined reference value and the flow of etchant gas into the chamber is controlled in response thereto.

REFERENCES:
patent: 5500076 (1996-03-01), Jerbic
patent: 5702562 (1997-12-01), Wakahara
patent: 6245581 (2001-06-01), Bonser et al.
patent: 6368879 (2002-04-01), Toprac
patent: 6461878 (2002-10-01), Lansford

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