Modular CMOS analog integrated circuit and power technology

Details Modular CMOS analog integrated circuit and power technology Modular CMOS analog integrated circuit and power technology

2007-07-30

2009-10-27

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000, C257S371000, C257S338000, C257SE27060, C257SE27062, C257SE27064, C257SE27067, C438S220000

Reexamination Certificate

active

07608895

ABSTRACT:
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms of a lateral trench MOSFET, and a 30V lateral N-channel DMOS. Each of the devices is extremely compact, both laterally and vertically, and can be fully isolated from all other devices in the substrate.

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