Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-03-25

2009-12-01

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21561, C438S476000

Reexamination Certificate

active

07625786

ABSTRACT:
Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

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