Thin film transistor and method of fabricating the same

Details Thin film transistor and method of fabricating the same Thin film transistor and method of fabricating the same

2006-08-24

2009-10-27

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S166000, C438S486000, C257S290000, C257S368000, C257SE21370, C257SE21535

Reexamination Certificate

active

07608869

ABSTRACT:
A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle of the polysilicon layer within a range of about 40 to about 80°, forming a semiconductor layer using the polysilicon layer.

REFERENCES:
patent: 7250312 (2007-07-01), Koezuka et al.
patent: 2004/0241395 (2004-12-01), Jing et al.
patent: 2005/0074963 (2005-04-01), Fujii et al.
patent: 2005/0158928 (2005-07-01), So
patent: 2006/0030085 (2006-02-01), Park et al.
patent: 10-2003-0060403 (2003-07-01), None

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