Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-23
2009-08-25
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27104
Reexamination Certificate
active
07579641
ABSTRACT:
A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug, wherein the ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below, the lower electrode being connected electrically to the conductive plug, a layer containing oxygen being interposed between the conductive plug and the lower electrode, a layer containing nitrogen being interposed between the layer containing oxygen and the lower electrode, a self-aligned layer being interposed between the layer containing nitrogen and the lower electrode.
REFERENCES:
patent: 5341325 (1994-08-01), Nakano et al.
patent: 6992019 (2006-01-01), Lee et al.
patent: 7084076 (2006-08-01), Park et al.
patent: 7504684 (2009-03-01), Kanaya
patent: 2004/0166596 (2004-08-01), Sashida et al.
patent: 2005/0205910 (2005-09-01), Kumura et al.
patent: 2006/0040510 (2006-02-01), Lee et al.
patent: 2008/0073680 (2008-03-01), Wang
patent: 2008/0142915 (2008-06-01), Sashida
patent: 2008/0191254 (2008-08-01), Matsuura
patent: 1480998 (2004-03-01), None
patent: 2004-153031 (2004-05-01), None
Chinese Office Action dated Mar. 28, 2008, issued in corresponding Chinese patent application No. 200610006417.4.
Fujitsu Microelectronics Limited
Lulis Michael
Phung Anh
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4066306