Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-13
2009-12-15
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C134S003000, C427S299000
Reexamination Certificate
active
07632752
ABSTRACT:
A metallic copper and resin composite body manufacturing method of forming a copper wiring layer that forms an inner layer circuit, establishing an insulating layer with a resin on said wiring layer, forming via holes which expose the copper surface under the insulative layer, and depositing a metal on the copper surface that is exposed at the bottom of the via holes. The method includes a step of: removing copper oxide which forms on the surface of the copper that is exposed in the bottom of the via holes using a phosphoric acid aqueous solution with a pH between 1 and 3. The method suppresses haloing is and via holes with excellent solder bonding are formed.
REFERENCES:
patent: 6346678 (2002-02-01), Kono et al.
patent: 7025867 (2006-04-01), Czeczka et al.
Perkins Pamela E
Piskorski John J.
Rohm and Haas Electronic Materials LLC
Smith Zandra
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