Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-12-22
2009-06-16
Berman, Jack I (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492300
Reexamination Certificate
active
07547900
ABSTRACT:
Techniques for providing a ribbon-shaped gas cluster ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a ribbon-shaped gas cluster ion beam. The apparatus may comprise at least one nozzle configured to inject a source gas at a sufficient speed into a low-pressure vacuum space to form gas clusters. The apparatus may also comprise at least one ionizer that causes at least a portion of the gas clusters to be ionized. The apparatus may further comprise a beam-shaping mechanism that forms a ribbon-shaped gas cluster ion beam based on the ionized gas clusters.
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England Jonathan Gerald
Olson Joseph C.
Renau Anthony
Berman Jack I
Ippolito Rausch Nicole
Varian Semiconductor Equipment Associates Inc.
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