Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-05-26
2009-11-17
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C264S219000, C430S302000, C430S322000, C430S324000, C257SE23124
Reexamination Certificate
active
07618903
ABSTRACT:
The patterning method includes forming a synthetic resin layer on a substrate, providing a mold in which a predetermined pattern is formed and metal particles are distributed on the surface of the mold, contacting the mold having the predetermined pattern with the synthetic resin layer, transferring the pattern of the mold onto the synthetic resin layer to form a patterned synthetic resin layer, and forming an organic layer on the patterned synthetic resin layer.
REFERENCES:
patent: 2003/0044727 (2003-03-01), Park et al.
patent: 2005/0206048 (2005-09-01), Ryu et al.
patent: 03-038314 (1991-02-01), None
patent: 2002-270541 (2002-09-01), None
patent: 2004-299153 (2004-10-01), None
Ghyka Alexander G
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
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