Method for fabricating semiconductor device including plug

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S719000, C438S723000

Reexamination Certificate

active

07615494

ABSTRACT:
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate, etching the insulation layer using a hard mask pattern to form a contact hole, filling the contact hole with a conductive layer, etching the conductive layer to form a plug in the contact hole, removing the remaining hard mask pattern to expose an upper portion of the plug and have the upper portion protrude above the insulation layer, and forming a metal line over the protruding plug and around the upper portion of the plug.

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