Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-20
2009-08-25
Purvis, Sue (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29151, C257SE51005, C438S151000
Reexamination Certificate
active
07579653
ABSTRACT:
The invention provides an improved thin film transistor (TFT) that can be formed at room temperature and has an improved contact resistance between an active layer and source and drain electrodes, and further provides a flat display device using such a TFT. The TFT includes an active layer including at least two nano particle layers which include at least one nano particle type, an insulating layer interposed between the nano particle layers, a gate electrode insulated from the active layer, and source and drain electrodes formed in respective channels, the source and drain electrodes contact one of the nano particle layers of the active layer. The structure of the TFT facilitates the simultaneous manufacturing of a plurality of different types of TFTs.
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Chinese Office Action dated Aug. 1, 2008.
Kim Hye-Dong
Koo Jae-Bon
Suh Min-Chul
H.C. Park & Associates PLC
Purvis Sue
Samsung Mobile Display Co., Ltd.
Wright Tucker
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