Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2006-07-28

2009-11-24

Andújar, Leonardo (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S500000, C257SE29297

Reexamination Certificate

active

07622774

ABSTRACT:
Disclosed is a semiconductor device of n-type MOSFET structure, which comprises a semiconductor substrate having a device isolation region, diffusion regions formed in the semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a F-containing NiSi layer formed on the diffusion regions and containing F atoms at a concentration of 3.0×1013cm−2or more in areal density, wherein a depth from the junction position formed between the diffusion region and the semiconductor substrate to the bottom of the F-containing NiSi layer is confined within the range of 20 to 100 nm, and the concentration of F atoms at an interface between the F-containing NiSi layer and the semiconductor substrate is 8.0×1018cm−3or more.

REFERENCES:
patent: 5885886 (1999-03-01), Lee
patent: 6545370 (2003-04-01), Ngo et al.
patent: 7141467 (2006-11-01), Hokazono et al.
patent: 2004/0256645 (2004-12-01), Tsuchiaki et al.
patent: 2005/0250319 (2005-11-01), Carruthers et al.
patent: 10-178171 (1998-06-01), None
patent: 11-111980 (1999-04-01), None
patent: 11-214328 (1999-08-01), None

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