Semiconductor integrated circuit device having...

Details Semiconductor integrated circuit device having... Semiconductor integrated circuit device having...

2005-07-29

2009-02-03

Lewis, Monica (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S359000, C257S904000

Reexamination Certificate

active

07485933

ABSTRACT:
A semiconductor device has a first insulating film formed on a semiconductor substrate and resistors disposed on the first insulating film. Each of the resistors is formed of a polycrystalline silicon film having a low concentration impurity region and high concentration impurity regions disposed on opposite sides of the low concentration impurity region. The low concentration impurity regions of the plurality of resistors have different lengths from one another. A second insulating film is disposed on the resistors. Contact holes are formed on the second insulating film and are disposed on the high concentration impurity regions. First metal wirings are connected to the respective contact holes and connect the resistors in series. A second metal wiring is connected to one of the resistors located at one end of the resistors connected in series. The second metal wiring covers the low concentration impurity region of all of the resistors.

REFERENCES:
patent: 5493148 (1996-02-01), Ohata et al.
patent: 406188371 (1994-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor integrated circuit device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor integrated circuit device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4058019