Semiconductor device

Details Semiconductor device Semiconductor device

2006-04-07

2009-06-02

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C438S588000

Reexamination Certificate

active

07541643

ABSTRACT:
This semiconductor device comprises a pillar layer including a first semiconductor pillar layer of a first conductivity type and a second semiconductor pillar layer of a second conductivity type formed alternately on a first semiconductor layer. At the same depth position in the device region and the end region, a difference between an impurity concentration [cm-3] of the second semiconductor pillar layer in the device region and that of the second semiconductor pillar layer in the end region is less than plus or minus 5%. A width W11[um] of the first semiconductor pillar layer in the device region, a width W21[um] of the second semiconductor pillar layer in the device region, a width W12[um] of the first semiconductor pillar layer in the end region, and a width W22[um] of the second semiconductor pillar layer in the end region, meet the relationship of W21/W11<W22/W12.

REFERENCES:
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patent: 6693338 (2004-02-01), Saitoh et al.
patent: 6870201 (2005-03-01), Deboy et al.
patent: 6888195 (2005-05-01), Saito et al.
patent: 6995426 (2006-02-01), Okumura et al.
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patent: 2001-135819 (2001-05-01), None
patent: 2003-124465 (2003-04-01), None
patent: 2003-204065 (2003-07-01), None
patent: 2004-22716 (2004-01-01), None
U.S. Appl. No. 11/399,448, filed Apr. 7, 2006, Ono, et al.

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