One transistor DRAM cell structure

Details One transistor DRAM cell structure One transistor DRAM cell structure

2006-10-31

2009-10-27

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE29271

Reexamination Certificate

active

07608898

ABSTRACT:
A one-transistor dynamic random access memory (DRAM) cell includes a transistor which has a first source/drain region, a second source/drain region, a body region between the first and second source/drain regions, and a gate over the body region. The first source/drain region includes a Schottky diode junction with the body region and the second source/drain region includes an n-p diode junction with the body region.

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International Search Report for correlating PCT Patent Application No. PCT/US 07/77170 dated Mar. 10, 2008.

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