Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2005-04-08

2009-10-06

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257SE29164

Reexamination Certificate

active

07598556

ABSTRACT:
A semiconductor device includes: first and second conductive layers; a first insulating film; a first plug; a second insulating film; a first opening; and a capacitor constituted by a lower electrode made of a first metal film formed on the wall and bottom of the first opening and electrically connected to the upper end of the first plug, a capacitive dielectric film made of a ferroelectric film formed on the lower electrode, and an upper electrode made of a second metal film formed on the capacitive dielectric film. The second conductive layer and the upper electrode are electrically connected to each other in the first and second insulating films.

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Japanese Notice of Reasons for Rejection, w/ English translation thereof, issued in Japanese Patent Application No. JP 2006-034398 dated Jul. 14, 2009.

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