Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S759000

Reexamination Certificate

active

07449408

ABSTRACT:
It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating layer with an organic resin.

REFERENCES:
patent: 5518579 (1996-05-01), Katsuyama et al.
patent: 5955244 (1999-09-01), Duval
patent: 6037197 (2000-03-01), Yamazaki et al.
patent: 6127279 (2000-10-01), Konuma
patent: 6664029 (2003-12-01), Imai et al.
patent: 6797647 (2004-09-01), Shono et al.
patent: 0 665 470 (1995-08-01), None
patent: 1 271 244 (2003-01-01), None
patent: 62-247523 (1987-10-01), None
patent: 5-36598 (1993-02-01), None
patent: 5-72741 (1993-03-01), None
patent: 7-249572 (1995-09-01), None
patent: 08-078329 (1996-03-01), None
patent: 2000-003960 (2000-01-01), None
patent: 2000-516355 (2000-12-01), None
patent: 2001-284327 (2001-10-01), None
patent: 2002-40668 (2002-02-01), None
patent: 2003-7579 (2003-01-01), None
patent: WO 98/08143 (1998-02-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4050793

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.