Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-01-12
2008-11-04
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S687000
Reexamination Certificate
active
07446040
ABSTRACT:
A structure and process are provided that are capable of reducing the occurrence of discontinuities within the metallization, such as voiding or seams, formed during electroplating at the edges of semiconductor metallization arrays. The structure includes a metallization bar located around the periphery of the array. The process employs the structure during electroplating.
REFERENCES:
patent: 6245676 (2001-06-01), Ueno
patent: 6620726 (2003-09-01), Preusse et al.
patent: 6908807 (2005-06-01), Rueger
Murray Conal E.
Vereecken Philippe M.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Picardat Kevin M
Trepp Robert M.
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