Power IGBT with increased robustness

Details Power IGBT with increased robustness Power IGBT with increased robustness

2006-11-09

2008-12-30

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S335000, C257S341000, C257SE29027

Reexamination Certificate

active

07470952

ABSTRACT:
A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.

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