Imaging apparatus and radiation imaging apparatus

Details Imaging apparatus and radiation imaging apparatus Imaging apparatus and radiation imaging apparatus

2007-01-22

2008-12-23

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C438S030000, C349S095000

Reexamination Certificate

active

07468531

ABSTRACT:
An imaging apparatus is provided in which a plurality of pixels, each having a conversion element and a thin-film transistor, are arranged in a two-dimensional fashion on an insulating substrate; the photoelectric conversion element is arranged over the thin-film transistor, with an insulating film, which serves as an interlayer insulating film, inserted between the conversion element and the thin-film transistor; and by way of a contact hole portion provided in the insulating film, the source electrode or the drain electrode of the thin-film transistor and the photoelectric conversion element are connected with each other. The imaging apparatus has a pixel in which the contact hole portion is removed through a laser-beam irradiation so that the connection portion between the conversion element and a conductive layer, which serves as the source electrode or the drain electrode of the thin-film transistor, is discontinued.

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