Resist material and pattern formation method using the same

Details Resist material and pattern formation method using the same Resist material and pattern formation method using the same

2006-05-02

2008-12-09

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S905000, C430S919000

Reexamination Certificate

active

07462438

ABSTRACT:
A resist film made of a resist material including 4-pentanelactam, that is, hetero cyclic ketone, is formed on a substrate, and subsequently, pattern exposure is performed by irradiating the resist film with exposing light through a mask. Then, the resist film having been subjected to the pattern exposure is developed, thereby forming a resist pattern.

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patent: WO 0114348 (2001-03-01), None
Samyn et al, “Synthesis, Polymerization, and Copolymerization of Lactam-Substituted Styrenes”, Journal of Polymer Science, vol. 20, 987-995 (1982).
Masuda et al, “Tautomers As Monomers and Initiators”, Prog. Polymer Science, vol. 21, 557-591(1996).
Takanori Kudo, et al., “illumination, Acid Diffusion and Process Optimization Considerations for 193 nm Contact Hole Resists,” Advances in Resist Technology and Processing XIX, 2002 Proceedings of the SPIE, pp. 150-159, vol. 4690, SPIE.

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