Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-12
2008-11-25
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185110, C365S185160, C365S185170, C365S185180, C365S185220, C365S185290, C365S230030
Reexamination Certificate
active
07457168
ABSTRACT:
Disclosed is a non-volatile memory device and a method of erasing the non-volatile memory device. An erase voltage is simultaneously applied to a plurality of sectors contained in the non-volatile memory device. Then, erase validation is sequentially performed for each of the plurality sectors and results of the erase validation are stored in a plurality of pass information registers. According to the results stored in the pass information registers, sectors which were not successfully erased are simultaneously re-erased and then sequentially re-validated until no such “failed sectors” remain in the non-volatile memory device. Upon eliminating the “failed sectors” from the non-volatile memory device, a post-program operation is sequentially performed on each of the plurality of sectors.
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Jeong Jae-Yong
Lim Young-Ho
Pham Ly D
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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