Method of forming a metal interconnection of a semiconductor...

Details Method of forming a metal interconnection of a semiconductor... Method of forming a metal interconnection of a semiconductor...

2006-01-23

2008-11-04

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S631000, C438S645000, C438S687000

Reexamination Certificate

active

07446033

ABSTRACT:
A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal layer to form a metal interconnection remaining within the opening. Then, the metal interconnection is treated with plasma. The plasma treatment creates compressive stress in the metal interconnection, which stress produces hillocks at the surface of the metal interconnection. In addition, the plasma treatment process causes grains of the metal to grow, especially when the design rule is small, to thereby decrease the resistivity of the metal interconnection. The hillocks are then removed by a CMP process aimed at polishing the portion of the barrier layer that extends over the upper surface of the interlayer dielectric layer. Finally, a capping insulating layer is formed. The intentional forming of hillocks by the plasma treatment process at weak portions of the metal interconnection and the subsequent removal of the hillocks greatly reduces the possibility of any additional hillocks being produced at the surface of the metal interconnection, especially when the capping layer is formed.

REFERENCES:
patent: 6790778 (2004-09-01), Cheng et al.
patent: 7183199 (2007-02-01), Liu et al.
patent: 11-186261 (1999-07-01), None
patent: 1020020000237 (2002-01-01), None
patent: 1020020052833 (2002-07-01), None
patent: 1020030096829 (2003-12-01), None
patent: 1020040060447 (2004-07-01), None
patent: 584921 (2004-04-01), None
patent: I225684 (2004-12-01), None

Affiliated with

Also associated with

Rating

Method of forming a metal interconnection of a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a metal interconnection of a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a metal interconnection of a semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4042248