Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-06-17
2008-12-02
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S758000, C257S774000, C257SE23011, C438S622000, C438S653000
Reexamination Certificate
active
07459786
ABSTRACT:
A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.
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Inoue Osamu
Ishikawa Kensuke
Iwasaki Tomio
Ohta Hiroyuki
Oshima Takayuki
Lin John
Parker Kenneth
Renesas Technology Corp.
Townsend and Townsend / and Crew LLP
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