Wafer curvature estimation, monitoring, and compensation

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

Reexamination Certificate

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C257SE21324

Reexamination Certificate

active

07452793

ABSTRACT:
A method of determining wafer curvature in real-time is presented. The method includes establishing a first temperature profile for a hotplate surface, where the hotplate surface is divided into a plurality of temperature control zones. The method further includes positioning a wafer at a first height above the hotplate surface and determining a second temperature profile for the hotplate surface. The wafer curvature is then determined by using the second temperature profile. Also, a dynamic model of a processing system is presented and wafer curvature can be incorporated into the dynamic model.

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European Patent Office, Search Report and Written Opinion for corresponding PCT Application No. PCT/US2006/009019, Jun. 30, 2006, 8 pp.

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