Porogen material

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...

Reexamination Certificate

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C257SE29139

Reexamination Certificate

active

07456488

ABSTRACT:
A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

REFERENCES:
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6420441 (2002-07-01), Allen et al.
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6495479 (2002-12-01), Wu et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6632531 (2003-10-01), Blankenship
patent: 6670285 (2003-12-01), Hawker et al.
patent: 6936551 (2005-08-01), Moghadam et al.
patent: 7011864 (2006-03-01), Ishida
patent: 2002/0142579 (2002-10-01), Vincent et al.
patent: 2003/0044531 (2003-03-01), Ishida
patent: 2003/0077918 (2003-04-01), Wu et al.
patent: 2003/0124785 (2003-07-01), Xu et al.
patent: 2003/0146451 (2003-08-01), Huang et al.
patent: 2004/0071878 (2004-04-01), Schuhmacher et al.
patent: 2004/0087184 (2004-05-01), Mandal et al.
patent: 2004/0137243 (2004-07-01), Gleason et al.
patent: 2005/0130404 (2005-06-01), Moghadam et al.
patent: 2005/0181613 (2005-08-01), Xu et al.
patent: 2005/0268849 (2005-12-01), Ishida
A. Grill, et al., “Ultralow-k dielectrics prepared by plasm-enhanced chemcial vapor deposition” Applied Physics Letters, vol. 79, No. 6, pp. 803-805.

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