Semiconductor device having first and second separation...

Details Semiconductor device having first and second separation... Semiconductor device having first and second separation...

2006-10-26

2008-12-09

Sefer, Ahmed (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S239000, C257SE21567, C257SE21112, C257SE21703

Reexamination Certificate

active

07462913

ABSTRACT:
A semiconductor device includes: a SOI substrate having a SOI layer, a buried oxide layer and a support substrate; multiple first separation trenches on the SOI layer; multiple MOS transistors, each of which is surrounded with one first separation trench; a second separation trench on the SOI layer including n-ply field trenches; and multiple field regions such that a k-th field region is surrounded with a k-th field trench. One MOS transistor is disposed in each field region. The MOS transistors are connected in series. The first MOS transistor has a gate terminal as an input terminal. The n-th MOS transistor is connected to the power source potential through an output resistor. The n-th field region has an electric potential, which is fixed to the power source potential.

REFERENCES:
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patent: 2006/0231868 (2006-10-01), Yamada et al.
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S. Merchant et al., “Realization of High Breakdown Voltage(>700V)In Thin SOI Devices”, IEEE, 1991, pp. 31-35.
H. Akiyama et al., “A High Breakdown Voltage IC with Lateral Power Device based on SODI structure”, Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu, 2004, pp. 375-378 (Discussed on p. 1 of the spec.).

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