Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-07-25

2008-12-16

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257S393000, C257S382000, C257SE29161

Reexamination Certificate

active

07465996

ABSTRACT:
A semiconductor device includes: a semiconductor substrate divided into a first region and a second region; a first MIS transistor formed in the first region of the semiconductor substrate and including a stack of a first gate insulating film and a fully-silicided first gate electrode; and a second MIS transistor formed in the second region of the semiconductor substrate and including a stack of a second gate insulating film and a fully-silicided second gate electrode. The second gate electrode has a gate length larger than that of the first gate electrode. A middle portion in the gate length direction of the second gate electrode has a thickness smaller than the thickness of the first gate electrode.

REFERENCES:
patent: 5739573 (1998-04-01), Kawaguchi
patent: 2006/0163662 (2006-07-01), Kinoshita et al.
patent: 2000-252462 (2000-09-01), None
Aime, D., et al. “Work function tuning through dopant scanning and related effects in Ni Fully silicided gate of sub-45nm nodes CMOS” IEEE Tech. Digest, p. 87-90 (2004).
Kittl, J., et al. “Scalability of Ni FUSI gate processes: phase and Vt control to 30nm gate lengths” Symposium on VLSI Technology Digest of Technical Papers, p. 72-73 (2005).

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